| PART |
Description |
Maker |
| BDX94 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-3
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package
|
Seme LAB
|
| BUL44 BUL44G |
Bipolar Power T0220 NPN 2A 400V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Rectron Semiconductor
|
| 2SA1834 A5800344 2SC5001 2SC5001TLR 2SA1834TLR 2SC |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 20V的五（巴西）总裁| 10A条一（c）|律师- 63
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | SC-63
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | SC-63
Low VCE(sat) Transistor (Strobe flash) (-20V, -10A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
| 2SC6017 2SC6017-E 2SC6017-TL-E |
Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| 2SA1396 2SA1396-AZ 2SA1396M 2SA1396-K-AZ |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 10A I(C) | SOT-186 晶体管|晶体管|进步党| 100V的五（巴西）总裁| 10A条一（c）|的SOT - 186
10 A, 100 V, PNP, Si, POWER TRANSISTOR
PNP SILICON POWER TRANSISTOR
|
NEC, Corp.
|
| 2N5782L 2N5782L.MOD |
3.5 A, 65 V, PNP, Si, POWER TRANSISTOR, TO-205AA HERMETIC SEALED, METAL, TO-5, 3 PIN
Bipolar PNP Device in a Hermetically sealed TO5
|
TT electronics Semelab, Ltd.
Seme LAB
|
| MJW3281AG MJW3281A10 MJW1302AG |
Complementary NPN-PNP Silicon Power Bipolar Transistors
15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS 15 A, 230 V, NPN, Si, POWER TRANSISTOR, TO-247AD
Complementary NPN-PNP Silicon Power Bipolar Transistors
|
ON Semiconductor
|
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| NJT4030PT3G NJT4030PT1G NJT4030P |
Bipolar Power Transistors PNP Silicon
|
ONSEMI[ON Semiconductor]
|
